MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:09+
FQP70N10, FQP7N10, FQP7N10L Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-220
D/C: 09+
Description: MOSFET N-CH 100V 7.3A TO-220
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PDF/DataSheet Download
Datasheet: FQP70N10
File Size: 651704 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP7N10
File Size: 550853 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP7N10L
File Size: 559051 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQP70N10 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 57A |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 28.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 3300pF @ 25V |
| Power - Max | 160W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP70N10 FQP70N10 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.
| Symbol | Parameter | FQP70N10 | Units |
| VDSS | Drain-Source Voltage | 100 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC= 100) |
57 | A |
| 40.3 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 228 | A |
| VGSS | Gate-Source Voltage | ± 25 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 1300 | mJ |
| IAR | Avalanche Current (Note 1) | 57 | A |
| EAR | Repetitive Avalanche Energy (Note 1) |
16 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.0 | V/ns |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
160 | W |
| 1.06 | W/ | ||
| TJ , TSTG | Operating and Storage Temperature Range | -55 to +175 | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
| Technical/Catalog Information | FQP7N10 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 7.3A |
| Rds On (Max) @ Id, Vgs | 350 mOhm @ 3.65A, 10V |
| Input Capacitance (Ciss) @ Vds | 250pF @ 25V |
| Power - Max | 40W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 7.5nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP7N10 FQP7N10 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
| Symbol | Parameter | FQP7N10 | Units |
| VDSS | Drain-Source Voltage | 100 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC= 100) |
7.3 | A |
| 5.15 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 29.2 | A |
| VGSS | Gate-Source Voltage | ± 25 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 50 | mJ |
| IAR | Avalanche Current (Note 1) | 7.3 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 4.0 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 6.0 | V/ns |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
40 | W |
| 0.27 | W/ | ||
| TJ , TSTG | Operating and Storage Temperature Range | -55 to +175 | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
| Technical/Catalog Information | FQP7N10L |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 7.3A |
| Rds On (Max) @ Id, Vgs | 350 mOhm @ 3.65A, 10V |
| Input Capacitance (Ciss) @ Vds | 290pF @ 25V |
| Power - Max | 40W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 6nC @ 5V |
| Package / Case | TO-220 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP7N10L FQP7N10L |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.
| Symbol | Parameter | FQP7N10L | Units |
| VDSS | Drain-Source Voltage | 100 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC= 100) |
7.3 |
A |
| 5.15 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 29.2 | A |
| VGSS | Gate-Source Voltage | ± 20 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 50 | mJ |
| IAR | Avalanche Current (Note 1) | 7.3 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 4.0 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 6.0 |
V/ns |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
40 |
W |
| 0.27 | W/ | ||
| TJ , TSTG | Operating and Storage Temperature Range | -55 to +175 | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
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