MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:05+ D/C:TO-220
FQP60N06, FQP630, FQP65N06 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: 05+
D/C: TO-220
Description: MOSFET N-CH 60V 65A TO-220
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PDF/DataSheet Download
Datasheet: FQP10N20
File Size: 793262 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP630
File Size: 763132 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP65N06
File Size: 677006 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQP630 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 9A |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 4.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 550pF @ 25V |
| Power - Max | 78W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP630 FQP630 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, and DC-AC converters for uniteterrupted power supply,motor control.
|
Symbol |
Parameter |
FQP630 |
Units |
|
VDSS |
Drain-Source Voltage |
200 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
9 |
A |
|
5.7 |
A | ||
|
IDM |
Drain Current - Pulsed (Note 1) |
36 |
A |
|
VGSS |
Gate-Source Voltage |
± 25 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
162 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
9 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
7.8 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)- Derate above 25°C |
78 |
W |
|
0.62 |
W/°C | ||
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
°C |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
| Technical/Catalog Information | FQP65N06 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 65A |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 32.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 2410pF @ 25V |
| Power - Max | 150W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 65nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP65N06 FQP65N06 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
| Symbol | Parameter | FQP65N06 | Units |
| VDSS | Drain-Source Voltage | 60 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
65 | A |
| 46.1 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 260 | A |
| VGSS | Gate-Source Voltage | ± 25 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 650 | mJ |
| IAR | Avalanche Current (Note 1) | 65 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 15.0 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 7.0 | V/ns |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
150 | W |
| 1.00 | W/ | ||
| TJ,TSTG | Operating and Storage Temperature Range | -55 to +175 | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
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