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FQP5P20, FQP60N03, FQP60N03L

Table of contents:
Info of FQP5P20
Info of FQP60N03
Info of FQP60N03L

FQP5P20, FQP60N03, FQP60N03L Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:09+

FQP5P20, FQP60N03, FQP60N03L Datasheet download

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Part Number: FQP5P20

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 09+

Description: MOSFET P-CH 200V 4.8A TO-220

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FQP5P20 Parameters

Technical/Catalog Information	FQP5P20
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	4.8A
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 2.4A, 10V
Input Capacitance (Ciss) @ Vds	430pF @ 25V
Power - Max	75W
Packaging	Tube
Gate Charge (Qg) @ Vgs	13nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP5P20 FQP5P20

FQP5P20 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.

FQP5P20 Maximum Ratings

Symbol	Parameter	FQP5P20	Units
V_DSS	Drain-Source Voltage	-200	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	-4.8	A
I_D		-3.04	A
I_DM	Drain Current - Pulsed (Note 1)	-19.2	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	330	mJ
I_AR	Avalanche Current (Note 1)	-4.8	A
E_AR	Repetitive Avalanche Energy (Note 1)	7.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-5.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	75	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.6	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

FQP5P20 Features

• -4.8A, -200V, R_DS(on) = 1.4Ω @V_GS= -10 V
• Low gate charge ( typical 10 nC)
• Low C_rss ( typical 12 pF)
• Fast switching
• 100% avalanche tested

FQP60N03L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.

FQP60N03L Maximum Ratings

Symbol	Parameter	FQP60N03L	Units
V_DSS	Drain-Source Voltage	30	V
I_D	Drain Current - Continuous (T_C = 25) (Note 6) - Continuous (T_C = 100) (Note 6)	60	A
I_D		42.5	A
I_DM	Drain Current - Pulsed (Note 1)	240	A
V_GSS	Gate-Source Voltage	± 20	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	220	mJ
I_AR	Avalanche Current (Note 1)	60	A
E_AR	Repetitive Avalanche Energy (Note 1)	10.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	100	W
P_D	Power Dissipation (T_C = 25) - Derate above 25	0.67	W/
T_J , T_STG	Operating and Storage Temperature Range	-55 to +175
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

FQP60N03L Features

• 60A, 30V. R_DS(on) = 0.0135 @V_GS = 10 V
• Low gate charge ( typical 18.5 nC)
• Low Crss ( typical 155 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

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