MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:09+
FQP44N10, FQP44N10F, FQP45N03L Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-220
D/C: 09+
Description: MOSFET N-CH 100V TO-220
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Datasheet: FQP44N10
File Size: 583158 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: FQP10N20
File Size: 793262 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: FQP45N03L
File Size: 695561 KB
Manufacturer:
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| Technical/Catalog Information | FQP44N10 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 43.5A |
| Rds On (Max) @ Id, Vgs | 39 mOhm @ 21.75A, 10V |
| Input Capacitance (Ciss) @ Vds | 1800pF @ 25V |
| Power - Max | 146W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 62nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP44N10 FQP44N10 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
| Symbol | Parameter | FQP44N10 | Units |
| VDSS | Drain-Source Voltage | 100 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC= 100) |
43.5 | A |
| 30.8 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 174 | A |
| VGSS | Gate-Source Voltage | ± 25 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 530 | mJ |
| IAR | Avalanche Current (Note 1) | 43.5 | A |
| EAR | Repetitive Avalanche Energy (Note 1) |
14.6 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.0 | V/ns |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
146 | W |
| 0.97 | W/ | ||
| TJ , TSTG | Operating and Storage Temperature Range | -55 to +175 | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
| Technical/Catalog Information | FQP44N10F |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 43.5A |
| Rds On (Max) @ Id, Vgs | 39 mOhm @ 21.75A, 10V |
| Input Capacitance (Ciss) @ Vds | 1800pF @ 25V |
| Power - Max | 146W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 62nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP44N10F FQP44N10F |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.
| Symbol | Parameter | FQP45N03L | Units |
| VDSS | Drain-Source Voltage | 30 | V |
| ID |
Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
45 | A |
| 31.8 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 180 | A |
| VGSS | Gate-Source Voltage | ± 20 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 200 | mJ |
| IAR | Avalanche Current (Note 1) | 45 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 7.5 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 7.0 | V/ns |
| PD |
Power Dissipation (TC = 25°C) - Derate above 25°C |
75 | W |
| 0.5 | W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +175 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
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