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FQP2P40, FQP30N06, FQP30N06L

Table of contents:
Info of FQP2P40
Info of FQP30N06
Info of FQP30N06L

FQP2P40, FQP30N06, FQP30N06L Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:09+

FQP2P40, FQP30N06, FQP30N06L Datasheet download

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Part Number: FQP2P40

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 09+

Description: MOSFET N-CHAN 60V 32A TO-220

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FQP2P40 Parameters

Technical/Catalog Information	FQP2P40
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	400V
Current - Continuous Drain (Id) @ 25° C	2A
Rds On (Max) @ Id, Vgs	6.5 Ohm @ 1A, 10V
Input Capacitance (Ciss) @ Vds	350pF @ 25V
Power - Max	63W
Packaging	Tube
Gate Charge (Qg) @ Vgs	13nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP2P40 FQP2P40

FQP2P40 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology.

FQP2P40 Maximum Ratings

Symbol	Parameter	FQP2P40	Units
V_DSS	Drain-Source Voltage	-400	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	-2.0	A
I_D		-1.27	A
I_DM	Drain Current - Pulsed (Note 1)	-8.0	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	120	mJ
I_AR	Avalanche Current (Note 1)	-2.0	A
E_AR	Repetitive Avalanche Energy (Note 1)	6.3	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-4.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	63	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.51	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

FQP2P40 Features

• -2.0A, -400V, R_DS(on) = 6.5Ω @V_GS = -10 V
• Low gate charge ( typical 10 nC)
• Low C_rss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQP30N06 Parameters

Technical/Catalog Information	FQP30N06
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	40 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	945pF @ 25V
Power - Max	79W
Packaging	Tube
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP30N06 FQP30N06

FQP30N06 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

FQP30N06 Maximum Ratings

Symbol	Parameter	FQP30N06	Units
V_DSS	Drain-Source Voltage	60	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C= 100)	30	A
I_D		21.3	A
I_DM	Drain Current - Pulsed (Note 1)	120	A
V_GSS	Gate-Source Voltage	± 25	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	280	mJ
I_AR	Avalanche Curren (Note 1)	30	A
E_AR	Repetitive Avalanche Energy (Note 1)	7.9	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	79	W
P_D	Power Dissipation (T_C = 25) - Derate above 25	0.53	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +175
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

FQP30N06 Features

* 30A, 60V, R_DS(on) = 0.04 @V_GS = 10 V
* Low gate charge ( typical 19 nC)
* Low Crss ( typical 40 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating

FQP30N06L Parameters

Technical/Catalog Information	FQP30N06L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	32A
Rds On (Max) @ Id, Vgs	35 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	1040pF @ 25V
Power - Max	79W
Packaging	Tube
Gate Charge (Qg) @ Vgs	20nC @ 5V
Package / Case	TO-220
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP30N06L FQP30N06L

FQP30N06L General Description

FQP30N06L Maximum Ratings

Symbol	Parameter	FQP30N06L	Units
V_DSS	Drain-Source Voltage	60	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C= 100)	32	A
I_D		22.6	A
I_DM	Drain Current - Pulsed (Note 1)	128	A
V_GSS	Gate-Source Voltage	± 20	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	350	mJ
I_AR	Avalanche Curren (Note 1)	32	A
E_AR	Repetitive Avalanche Energy (Note 1)	7.9	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
P_D	Power Dissipation (T_C= 25) - Derate above 25	79	W
P_D	Power Dissipation (T_C= 25) - Derate above 25	0.53	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +175
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

FQP30N06L Features

* 32A, 60V, R_DS(on) = 0.035 @V_GS= 10 V
* Low gate charge ( typical 15 nC)
* Low Crss ( typical 50 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating

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