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FQP2N90, FQP2NA90, FQP2P25

Table of contents:
Info of FQP2N90
Info of FQP2NA90
Info of FQP2P25

FQP2N90, FQP2NA90, FQP2P25 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:09+

FQP2N90, FQP2NA90, FQP2P25 Datasheet download

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Part Number: FQP2N90

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 09+

Description: MOSFET P-CH 250V 2.3A TO-220

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FQP2N90 Parameters

Technical/Catalog Information	FQP2N90
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	2.2A
Rds On (Max) @ Id, Vgs	7.2 Ohm @ 1.1A, 10V
Input Capacitance (Ciss) @ Vds	500pF @ 25V
Power - Max	85W
Packaging	Tube
Gate Charge (Qg) @ Vgs	15nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP2N90 FQP2N90

FQP2NA90 Parameters

Technical/Catalog Information	FQP2NA90
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	2.8A
Rds On (Max) @ Id, Vgs	5.8 Ohm @ 1.4A, 10V
Input Capacitance (Ciss) @ Vds	680pF @ 25V
Power - Max	107W
Packaging	Tube
Gate Charge (Qg) @ Vgs	20nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP2NA90 FQP2NA90

FQP2NA90 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

FQP2NA90 Maximum Ratings

Symbol	Parameter	FQP2NA90	Units
V_DSS	Drain-Source Voltage	900	V
I_D	Drain Current - Continuous (TC = 25) 2.8 A - Continuous (TC = 100)	2.8	A
I_D		1.77	A
I_DM	Drain Current - Pulsed (Note 1)	11.2	A
V_GSS	Gate-Source Voltage	±30	A
E_AS	Single Pulsed Avalanche Energy (Note 2)	310	V
I_AR	Avalanche Current (Note 1)	2.8	mJ
E_AR	Repetitive Avalanche Energy (Note 1)	10.7	A
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
P_D	Power Dissipation (TC = 25) - Derate above 25	107	W
P_D	Power Dissipation (TC = 25) - Derate above 25	0.85	W
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150	W/
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

FQP2NA90 Features

• 2.8A, 900V, R_DS(on) = 5.8 @ V_GS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQP2P25 Parameters

Technical/Catalog Information	FQP2P25
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	2.3A
Rds On (Max) @ Id, Vgs	4 Ohm @ 1.15A, 10V
Input Capacitance (Ciss) @ Vds	250pF @ 25V
Power - Max	52W
Packaging	Tube
Gate Charge (Qg) @ Vgs	8.5nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP2P25 FQP2P25

FQP2P25 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.

FQP2P25 Maximum Ratings

Symbol	Parameter	FQP2P25	Units
V_DSS	Drain-Source Voltage	-250	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	-2.3	A
I_D		-1.45	A
I_DM	Drain Current - Pulsed (Note 1)	-9.2	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	120	mJ
I_AR	Avalanche Current (Note 1)	-2.3	A
E_AR	Repetitive Avalanche Energy (Note 1)	5.2	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-5.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	52	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.42	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

FQP2P25 Features

• -2.3A, -250V, R_DS(on) = 4.0Ω @V_GS = -10 V
• Low gate charge ( typical 6.5 nC)
• Low C_rss( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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