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FQP2N60, FQP2N60C, FQP2N80

Table of contents:
Info of FQP2N60
Info of FQP2N60C
Info of FQP2N80

FQP2N60, FQP2N60C, FQP2N80 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:06+

FQP2N60, FQP2N60C, FQP2N80 Datasheet download

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Part Number: FQP2N60

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 06+

Description: MOSFET N-CH 800V 2.4A TO-220

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FQP2N60 Parameters

Technical/Catalog Information	FQP2N60
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	2.4A
Rds On (Max) @ Id, Vgs	4.7 Ohm @ 1.2A, 10V
Input Capacitance (Ciss) @ Vds	350pF @ 25V
Power - Max	64W
Packaging	Tube
Gate Charge (Qg) @ Vgs	11nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP2N60 FQP2N60

FQP2N60 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

FQP2N60 Maximum Ratings

Symbol	Parameter	FQP2N60	Units
V_DSS	Drain-Source Voltage	600	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	2.4	A
I_D		1.5	A
I_DM	Drain Current - Pulsed (Note 1)	9.6	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	140	mJ
I_AR	Avalanche Current (Note 1)	2.4	A
E_AR	Repetitive Avalanche Energy (Note 1)	6.4	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	64	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.51	W/°C
T_J, T_STG	Operating and Storage Temperature Range	-55 to +175	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 45mH, IAS = 2.4A, V_DD = 50V, R_G = 25 , Starting T_J= 25°C
3. I_SD 2.4A, di/dt 200A/s, V_DD BV_DSS, Starting T_J= 25°C

FQP2N60 Features

• 2.4A, 600V, R_DS(on) = 4.7 @V_GS = 10 V
• Low gate charge ( typical 9.0 nC)
• Low Crss ( typical 5.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQP2N60C Parameters

Technical/Catalog Information	FQP2N60C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	2A
Rds On (Max) @ Id, Vgs	4.7 Ohm @ 1A, 10V
Input Capacitance (Ciss) @ Vds	235pF @ 25V
Power - Max	54W
Packaging	Tube
Gate Charge (Qg) @ Vgs	12nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP2N60C FQP2N60C

FQP2N60C General Description

FQP2N60C Maximum Ratings

Symbol	Parameter	FQP2N60C	FQPF2N60C	Units
V_DSS	Drain-Source Voltage	600		V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	2.0	2.0*	A
I_D		1.35	1.35*	A
I_DM	Drain Current - Pulsed (Note 1)	8	8*	A
V_GSS	Gate-Source Voltage	± 30		V
E_AS	Single Pulsed Avalanche Energy (Note 2)	120		mJ
I_AR	Avalanche Current (Note 1)	2.0		A
E_AR	Repetitive Avalanche Energy (Note 1)	5.4		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5		V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	54	23	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.43	0.18	W/°C
T_J, T_STG	Operating and Storage Temperature Range	-55 to +175		°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300		°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 56mH, I_AS = 2A, V_DD = 50V, R_G = 25 , Starting T_J = 25°C
3. IS_D 2A, di/dt 200A/s, V_DD BV_DSS, Starting T_J= 25°C

FQP2N60C Features

• 2.0A, 600V, R_DS(on) = 4.7 @V_GS = 10 V
• Low gate charge ( typical 8.5 nC)
• Low Crss ( typical 4.3 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQP2N80 Parameters

Technical/Catalog Information	FQP2N80
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	2.4A
Rds On (Max) @ Id, Vgs	6.3 Ohm @ 1.2A, 10V
Input Capacitance (Ciss) @ Vds	550pF @ 25V
Power - Max	85W
Packaging	Tube
Gate Charge (Qg) @ Vgs	15nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP2N80 FQP2N80

FQP2N80 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

FQP2N80 Maximum Ratings

Symbol	Parameter	FQP2N80	Units
V_DSS	Drain-Source Voltage	800	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C= 100)	2.4	A
I_D		1.52	A
I_DM	Drain Current - Pulsed (Note 1)	9.6	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	180	mJ
I_AR	Avalanche Current (Note 1)	2.4	A
E_AR	Repetitive Avalanche Energy (Note 1)	8.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
P_D	Power Dissipation (T_C= 25) - Derate above 25	85	W
P_D	Power Dissipation (T_C= 25) - Derate above 25	0.68	W/
T_J , T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

FQP2N80 Features

* 2.4A, 800V, R_DS(on) = 6.3 @V_GS = 10 V
* Low gate charge ( typical 12 nC)
* Low Crss ( typical 5.5 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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