MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:06+ D/C:TO-220
FQP27N50, FQP27P06, FQP28N15 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: 06+
D/C: TO-220
Description: MOSFET P-CHAN 60V 27A TO220
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PDF/DataSheet Download
Datasheet: FQP10N20
File Size: 793262 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP27P06
File Size: 712163 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP28N15
File Size: 816823 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQP27P06 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 27A |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 13.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1400pF @ 25V |
| Power - Max | 120W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 43nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP27P06 FQP27P06 |
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
| Symbol | Parameter |
FQP27P06 |
Units |
| VDSS | Drain-Source Voltage |
-60 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
-27 |
A |
|
-19.1 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
-108 |
A |
| VGSS | Gate-Source Voltage |
± 25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
560 |
mJ |
| IAR | Avalanche Current (Note 1) |
-27 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
12 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
-7.0 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
120 |
W |
|
0.8 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
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