MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:09+
FQP19N20L, FQP1N50, FQP1N60 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-220
D/C: 09+
Description: MOSFET N-CH 600V 1.2A TO-220
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PDF/DataSheet Download
Datasheet: FQP19N20L
File Size: 752224 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP1N50
File Size: 755249 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP1N60
File Size: 531879 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQP19N20L |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 21A |
| Rds On (Max) @ Id, Vgs | 140 mOhm @ 10.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 2200pF @ 25V |
| Power - Max | 140W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 35nC @ 5V |
| Package / Case | TO-220 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP19N20L FQP19N20L |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supplies, and motor control.
|
Symbol |
Parameter |
FQP19N20L |
Units |
|
VDSS |
Drain-Source Voltage |
200 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
21 |
A |
|
13.3 |
A | ||
|
IDM |
Drain Current - Pulsed (Note 1) |
84 |
A |
|
VGSS |
Gate-Source Voltage |
± 20 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
250 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
21 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
14 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C) - Derate above 25°C |
140 |
W
|
|
1.12 |
W/ | ||
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
°C |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
| Technical/Catalog Information | FQP1N50 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 1.4A |
| Rds On (Max) @ Id, Vgs | 9 Ohm @ 700mA, 10V |
| Input Capacitance (Ciss) @ Vds | 150pF @ 25V |
| Power - Max | 40W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 5.5nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP1N50 FQP1N50 |
| Technical/Catalog Information | FQP1N60 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 1.2A |
| Rds On (Max) @ Id, Vgs | 11.5 Ohm @ 600mA, 10V |
| Input Capacitance (Ciss) @ Vds | 150pF @ 25V |
| Power - Max | 40W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 6nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP1N60 FQP1N60 |
| Symbol | Characteristics | Value | Units |
| VDSS | Drain-to-Source Voltage | 600 | V |
| ID | Continuous Drain Current (TC = 25) | 1.2 | A |
| Continuous Drain Current (TC = 100) | 0.76 | ||
| IDM | Drain Current-Pulsed | 4.8 | A |
| VGS | Gate-to-Source Voltage | ±30 | V |
| EAS | Single Pulsed Avalanche Energy | 50 | mJ |
| IAR | Avalanche Current | 1.2 | A |
| EAR | Repetitive Avalanche Energy | 4.0 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 4.5 | V/ns |
| PD | Total Power Dissipation (TC = 25) Linear Derating Factor |
40 0.32 |
W W/ |
| TJ , TSTG | Operating Junction and Storage Temperature Range |
-55 to +150 | |
| TL | Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |
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