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FQP19N10L, FQP19N20, FQP19N20C

Table of contents:
Info of FQP19N10L
Info of FQP19N20
Info of FQP19N20C

FQP19N10L, FQP19N20, FQP19N20C Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:09+

FQP19N10L, FQP19N20, FQP19N20C Datasheet download

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Part Number: FQP19N10L

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 09+

Description: MOSFET N-CH 200V 19A TO-220

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FQP19N10L Parameters

Technical/Catalog Information	FQP19N10L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	19A
Rds On (Max) @ Id, Vgs	100 mOhm @ 9.5A, 10V
Input Capacitance (Ciss) @ Vds	870pF @ 25V
Power - Max	75W
Packaging	Tube
Gate Charge (Qg) @ Vgs	18nC @ 5V
Package / Case	TO-220
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP19N10L FQP19N10L

FQP19N10L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.

FQP19N10L Maximum Ratings

Symbol	Parameter	FQP19N10L	Units
VDSS	Drain-Source Voltage	100	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	19	A
ID		13.5	A
IDM	Drain Current - Pulsed (Note 1)	76	A
VGSS	Gate-Source Voltage	± 20	V
EAS	Single Pulsed Avalanche Energy (Note 2)	220	mJ
IAR	Avalanche Current (Note 1)	19	A
EAR	Repetitive Avalanche Energy (Note 1)	7.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	75	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	0.5	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQP19N10L Features

• 19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V
• Low gate charge ( typical 14 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

FQP19N20 Parameters

Technical/Catalog Information	FQP19N20
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	19.4A
Rds On (Max) @ Id, Vgs	150 mOhm @ 9.7A, 10V
Input Capacitance (Ciss) @ Vds	1600pF @ 25V
Power - Max	140W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP19N20 FQP19N20

FQP19N20 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, and DC-AC converters for uniteterrupted power supply,motor control.

FQP19N20 Maximum Ratings

Symbol	Parameter	FQP19N20	Units
V_DSS	Drain-Source Voltage	200	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	19.4	A
I_D		12.3	A
I_DM	Drain Current - Pulsed (Note 1)	78	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	250	mJ
I_AR	Avalanche Current (Note 1)	19.4	A
E_AR	Repetitive Avalanche Energy (Note 1)	14	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
P_D	Power Dissipation (T_C = 25°C)- Derate above 25°C	140	W
P_D	Power Dissipation (T_C = 25°C)- Derate above 25°C	1.12	W/°C
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

FQP19N20 Features

• 19.4A, 200V, R _DS(ON)= 0.15Ω @V_GS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQP19N20C Parameters

Technical/Catalog Information	FQP19N20C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	19A
Rds On (Max) @ Id, Vgs	170 mOhm @ 9.5A, 10V
Input Capacitance (Ciss) @ Vds	1080pF @ 25V
Power - Max	139W
Packaging	Tube
Gate Charge (Qg) @ Vgs	53nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP19N20C FQP19N20C

FQP19N20C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.

FQP19N20C Maximum Ratings

Symbol	Parameter	FQP19N20C	FQPF19N20C	Units
V_DSS	Drain-Source Voltage	200		V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	19.0	19.0 *	A
I_D		12.1	12.1 *	A
I_DM	Drain Current - Pulsed (Note 1)	76.0	76.0 *	A
V_GSS	Gate-Source Voltage	± 30		V
E_AS	Single Pulsed Avalanche Energy (Note 2)	433		mJ
I_AR	Avalanche Current (Note 1)	19.0		A
E_AR	Repetitive Avalanche Energy (Note 1)	13.9		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5		V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	139	43	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	1.11	0.34	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150		°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300		°C

FQP19N20C Features

• 19.0A, 200V, R_DS(on) = 0.17Ω @V_GS = 10 V
• Low gate charge ( typical 40.5 nC)
• Low C_rss( typical 85 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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