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FQP16N25C, FQP17N08, FQP17N08L

Table of contents:
Info of FQP16N25C
Info of FQP17N08
Info of FQP17N08L

FQP16N25C, FQP17N08, FQP17N08L Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:08+

FQP16N25C, FQP17N08, FQP17N08L Datasheet download

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Part Number: FQP16N25C

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 08+

Description: MOSFET N-CH 80V 16.5A TO-220

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FQP16N25C Parameters

Technical/Catalog Information	FQP16N25C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	15.6A
Rds On (Max) @ Id, Vgs	270 mOhm @ 7.8A, 10V
Input Capacitance (Ciss) @ Vds	1080pF @ 25V
Power - Max	139W
Packaging	Tube
Gate Charge (Qg) @ Vgs	53.5nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP16N25C FQP16N25C

FQP16N25C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.

FQP16N25C Maximum Ratings

Symbol	Parameter	FQP16N25C	FQPF16N25C	Units
V_DSS	Drain-Source Voltage	250		V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	15.6	15.6 *	A
I_D		9.8	9.8 *	A
I_DM	Drain Current - Pulsed (Note 1)	62.4	62.4 *	A
V_GSS	Gate-Source Voltage	± 30		V
E_AS	Single Pulsed Avalanche Energy (Note 2)	410		mJ
I_AR	Avalanche Current (Note 1)	15.6		A
E_AR	Repetitive Avalanche Energy (Note 1)	13.9		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5		V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	139	43	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	1.11	0.34	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150		°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300		°C

FQP16N25C Features

• 15.6A, 250V, R_DS(on) = 0.27Ω @V_GS = 10 V
• Low gate charge ( typical 41 nC)
• Low C_rss ( typical 68 pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQP17N08 Parameters

Technical/Catalog Information	FQP17N08
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25° C	16.5A
Rds On (Max) @ Id, Vgs	115 mOhm @ 8.25A, 10V
Input Capacitance (Ciss) @ Vds	450pF @ 25V
Power - Max	65W
Packaging	Tube
Gate Charge (Qg) @ Vgs	15nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP17N08 FQP17N08

FQP17N08 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

FQP17N08 Maximum Ratings

Symbol	Parameter	FQP17N08	Units
VDSS	Drain-Source Voltage	80	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	16.5	A
ID		11.6	A
IDM	Drain Current - Pulsed (Note 1)	66	A
VGSS	Gate-Source Voltage	± 25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	100	mJ
IAR	Avalanche Current (Note 1)	16.5	A
EAR	Repetitive Avalanche Energy (Note 1)	6.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.5	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	65	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	0.43	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQP17N08 Features

• 16.5A, 80V, RDS(on) = 0.115Ω @VGS = 10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 28 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

FQP17N08L Parameters

Technical/Catalog Information	FQP17N08L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25° C	16.5A
Rds On (Max) @ Id, Vgs	100 mOhm @ 8.25A, 10V
Input Capacitance (Ciss) @ Vds	520pF @ 25V
Power - Max	65W
Packaging	Tube
Gate Charge (Qg) @ Vgs	11.5nC @ 5V
Package / Case	TO-220
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP17N08L FQP17N08L

FQP17N08L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

FQP17N08L Maximum Ratings

Symbol	Parameter	FQP17N08L	Units
VDSS	Drain-Source Voltage	80	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	16.5	A
ID		11.6	A
IDM	Drain Current - Pulsed (Note 1)	66	A
VGSS	Gate-Source Voltage	± 20	V
EAS	Single Pulsed Avalanche Energy (Note 2)	100	mJ
IAR	Avalanche Current (Note 1)	16.5	A
EAR	Repetitive Avalanche Energy (Note 1)	6.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.5	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	65	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	0.43	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQP17N08L Features

• 16.5A, 80V, RDS(on) = 0.1Ω @VGS = 10 V
• Low gate charge ( typical 8.8 nC)
• Low Crss ( typical 29 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low level gate drive requirements allowing direct operation from logic drives

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