MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:92 D/C:138
FQNL1N50BBU, FQNL1N50BTA, FQNL2N50B Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: 92
D/C: 138
Description: MOSFET N-CH 500V 0.27A TO-92L
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PDF/DataSheet Download
Datasheet: FQN1N60C
File Size: 693385 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQN1N60C
File Size: 693385 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQNL2N50B
File Size: 612360 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQNL1N50BBU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 270mA |
| Rds On (Max) @ Id, Vgs | 9 Ohm @ 135mA, 10V |
| Input Capacitance (Ciss) @ Vds | 150pF @ 25V |
| Power - Max | 1.5W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 5.5nC @ 10V |
| Package / Case | TO-92L |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQNL1N50BBU FQNL1N50BBU |
| Technical/Catalog Information | FQNL1N50BTA |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 270mA |
| Rds On (Max) @ Id, Vgs | 9 Ohm @ 135mA, 10V |
| Input Capacitance (Ciss) @ Vds | 150pF @ 25V |
| Power - Max | 1.5W |
| Packaging | Tape & Box (TB) |
| Gate Charge (Qg) @ Vgs | 5.5nC @ 10V |
| Package / Case | TO-92L |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQNL1N50BTA FQNL1N50BTA |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
| Symbol | Parameter |
FQNL2N50B |
Units |
| VDSS | Drain-Source Voltage |
500 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
0.35 |
A |
|
0.22 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
1.4 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| IAR | Avalanche Current (Note 1) |
0.35 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
0.15 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
1.5 |
W |
|
0.012 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
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