MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:TO92 D/C:07+
FQN1N50CTA, FQN1N60C, FQNL1N50B Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: TO92
D/C: 07+
Description: MOSFET N-CH 500V TO-92
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PDF/DataSheet Download
Datasheet: FQN1N60C
File Size: 693385 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQN1N60C
File Size: 693385 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQNL1N50B
File Size: 635040 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQN1N50CTA |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 380mA |
| Rds On (Max) @ Id, Vgs | 6 Ohm @ 190mA, 10V |
| Input Capacitance (Ciss) @ Vds | 195pF @ 25V |
| Power - Max | 890mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 6.4nC @ 10V |
| Package / Case | TO-92 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQN1N50CTA FQN1N50CTA FQN1N50CTADKR ND FQN1N50CTADKRND FQN1N50CTADKR |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’ proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
| Symbol | Parameter |
FQN1N60C |
Units |
| VDSS | Drain-Source Voltage |
600 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
0.3 |
A |
|
0.18 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
1.2 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
33 |
mJ |
| IAR | Avalanche Current (Note 1) |
0.3 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
0.3 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
1 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
3 |
W | |
|
0.02 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
| Symbol | Parameter |
FQNL1N50B |
Units |
| VDSS | Drain-Source Voltage |
500 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
0.27 |
A |
|
0.17 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
1.08 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
1800 |
mJ |
| IAR | Avalanche Current (Note 1) |
0.27 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
0.15 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
1.5 |
W |
|
0.012 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
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