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FQNL1N50B

Features: • 0.27A, 500V, RDS(on) = 9.0Ω @VGS = 10 V• Low gate charge ( typical 4.0 nC)• Low Crss ( typical 3.0 pF)• Fast switching• Improved dv/dt capabilitySpecifications Symbol Parameter FQNL1N50B Units VDSS Drain-Source Voltage 500 V ...

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SeekIC No. : 004343336 Detail

FQNL1N50B: Features: • 0.27A, 500V, RDS(on) = 9.0Ω @VGS = 10 V• Low gate charge ( typical 4.0 nC)• Low Crss ( typical 3.0 pF)• Fast switching• Improved dv/dt capabilitySpeci...

FQNL1N50B Data Sheet

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Part Number:
FQNL1N50B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/18

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Product Details

Description



Features:

• 0.27A, 500V, RDS(on) = 9.0Ω @VGS = 10 V
• Low gate charge ( typical 4.0 nC)
• Low Crss ( typical 3.0 pF)
• Fast switching
• Improved dv/dt capability


Specifications

Symbol Parameter
FQNL1N50B
Units
VDSS Drain-Source Voltage
500
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
0.27
A
0.17
A
IDM Drain Current - Pulsed (Note 1)
1.08
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
1800
mJ
IAR Avalanche Current (Note 1)
0.27
A
EAR Repetitive Avalanche Energy (Note 1)
0.15
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
1.5
W
0.012
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power FQNL1N50B field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQNL1N50B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQNL1N50B is well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.




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