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FQNL1N50BBU

MOSFET 500V Single

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SeekIC No. : 00163218 Detail

FQNL1N50BBU: MOSFET 500V Single

FQNL1N50BBU Data Sheet

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Part Number:
FQNL1N50BBU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 0.27 A
Resistance Drain-Source RDS (on) : 6.8 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92L Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Packaging : Bulk
Continuous Drain Current : 0.27 A
Package / Case : TO-92L
Resistance Drain-Source RDS (on) : 6.8 Ohms


Parameters:

Technical/Catalog InformationFQNL1N50BBU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C270mA
Rds On (Max) @ Id, Vgs9 Ohm @ 135mA, 10V
Input Capacitance (Ciss) @ Vds 150pF @ 25V
Power - Max1.5W
PackagingBulk
Gate Charge (Qg) @ Vgs5.5nC @ 10V
Package / CaseTO-92L
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQNL1N50BBU
FQNL1N50BBU



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