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FQN1N60C

Features: ·0.3 A, 600 V, RDS(on) = 11.5 Ω @ VGS = 10 V· Low gate charge ( typical 4.8 nC )· Low Crss ( typical 3.5 pF)· Fast switching· 100 % avalanche tested· Improved dv/dt capabilitySpecifications Symbol Parameter FQN1N60C Units VDSS Drain-Source Voltage 600 V ID...

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SeekIC No. : 004343335 Detail

FQN1N60C: Features: ·0.3 A, 600 V, RDS(on) = 11.5 Ω @ VGS = 10 V· Low gate charge ( typical 4.8 nC )· Low Crss ( typical 3.5 pF)· Fast switching· 100 % avalanche tested· Improved dv/dt capabilitySpecifi...

FQN1N60C Data Sheet

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Part Number:
FQN1N60C
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·0.3 A, 600 V, RDS(on) = 11.5 Ω @ VGS = 10 V
· Low gate charge ( typical 4.8 nC )
· Low Crss ( typical 3.5 pF)
· Fast switching
· 100 % avalanche tested
· Improved dv/dt capability


Specifications

Symbol Parameter
FQN1N60C
Units
VDSS Drain-Source Voltage
600
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
0.3
A
0.18
A
IDM Drain Current - Pulsed (Note 1)
1.2
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
33
mJ
IAR Avalanche Current (Note 1)
0.3
A
EAR Repetitive Avalanche Energy (Note 1)
0.3
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD Power Dissipation (TA = 25°C) *
1
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
3
W
0.02
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These  N-Channel  enhancement  mode  power FQN1N60C  field  effect transistors  are  produced  using  Fairchild' proprietary,  planar stripe,  DMOS technology.

This  advanced  technology FQN1N60C  has  been  especially  tailored  to minimize  on-state  resistance,  provide  superior  switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQN1N60C is well suited for high efficiency  switched  mode  power  supplies,  active  power  factor correction,  electronic  lamp  ballasts  based  on  half  bridge topology.




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