Position: Home  > All Categories> Integrated Circuits (ICs) > FQN1N60C

FQN1N60C

Features: ·0.3 A, 600 V, RDS(on) = 11.5 Ω @ VGS = 10 V· Low gate charge ( typical 4.8 nC )· Low Crss ( typical 3.5 pF)· Fast switching· 100 % avalanche tested· Improved dv/dt capabilitySpecifications Symbol Parameter FQN1N60C Units VDSS Drain-Source Voltage 600 V ID...

product image

FQN1N60C Picture
See larger image
SeekIC No. : 004343335 Detail

FQN1N60C: Features: ·0.3 A, 600 V, RDS(on) = 11.5 Ω @ VGS = 10 V· Low gate charge ( typical 4.8 nC )· Low Crss ( typical 3.5 pF)· Fast switching· 100 % avalanche tested· Improved dv/dt capabilitySpecifi...

FQN1N60C Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FQN1N60C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/18

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·0.3 A, 600 V, RDS(on) = 11.5 Ω @ VGS = 10 V
· Low gate charge ( typical 4.8 nC )
· Low Crss ( typical 3.5 pF)
· Fast switching
· 100 % avalanche tested
· Improved dv/dt capability


Specifications

Symbol Parameter
FQN1N60C
Units
VDSS Drain-Source Voltage
600
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
0.3
A
0.18
A
IDM Drain Current - Pulsed (Note 1)
1.2
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
33
mJ
IAR Avalanche Current (Note 1)
0.3
A
EAR Repetitive Avalanche Energy (Note 1)
0.3
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD Power Dissipation (TA = 25°C) *
1
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
3
W
0.02
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These  N-Channel  enhancement  mode  power FQN1N60C  field  effect transistors  are  produced  using  Fairchild' proprietary,  planar stripe,  DMOS technology.

This  advanced  technology FQN1N60C  has  been  especially  tailored  to minimize  on-state  resistance,  provide  superior  switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQN1N60C is well suited for high efficiency  switched  mode  power  supplies,  active  power  factor correction,  electronic  lamp  ballasts  based  on  half  bridge topology.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Isolators
HCPL062N
HCPL316J
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Discrete Semiconductor Products
T508N12TOF
MUR20040
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
View more