FDR8308P_F40, FDR835N, FDR836P Selling Leads, Datasheet
MFG:FSC Package Cooled:EI D/C:2009+
FDR8308P_F40, FDR835N, FDR836P Datasheet download
Part Number: FDR8308P_F40
MFG: FSC
Package Cooled: EI
D/C: 2009+
FDR8308P_F40, FDR835N, FDR836P
- Table of contents:
Info of FDR8308P_F40
Info of FDR835N
Info of FDR836P
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About FDR4410
PDF/DataSheet Download
Datasheet: FDR4410
File Size: 225749 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FDR4410
PDF/DataSheet Download
Datasheet: FDR4410
File Size: 225749 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FDR836P
PDF/DataSheet Download
Datasheet: FDR836P
File Size: 230264 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FDR836P General Description
SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are needed.
FDR836P Maximum Ratings
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
-20 |
V |
|
VGSS |
Gate-Source Voltage |
±8 |
V |
|
ID |
Draint Current - Continuous (Note 1) |
-6.1 |
A |
|
- Pulsed |
-18 | ||
|
PD |
Maximum Power Dissipation (Note 1a) |
1.8 |
W |
|
(Note 1b) |
1.0 | ||
|
(Note 1c) |
0.9 | ||
|
TJ, TSTG |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
FDR836P Features
• -6.1 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 V
RDS(ON) = 0.040 W @ VGS = -2.5 V
• High density cell design for extremely low RDS(ON).
• Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8.
RDS(ON) = 0.040 W @ VGS = -2.5 V
• High density cell design for extremely low RDS(ON).
• Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8.
FDR836P Connection Diagram
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