MOSFET SSOT-8 N-CH 30V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 11 A | ||
Resistance Drain-Source RDS (on) : | 0.009 Ohms | Configuration : | Single Quint Drain Dual Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SSOT-8 | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
30 |
V |
VGSS |
Gate-Source Voltage |
±20 |
V |
ID |
Draint Current - Continuous (Note 1) |
11 |
A |
- Pulsed |
40 | ||
PD |
Maximum Power Dissipation (Note 1a) |
1.8 |
W |
(Note 1b) |
1 | ||
(Note 1c) |
0.9 | ||
TJ, TSTG |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
The SuperSOT-8 family of N-Channel Logic Level MOSFETs FDR4420A have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.
These MOSFETs FDR4420A are produced using Fairchild Semiconductor's advanced PowerTrench process that has been tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices FDR4420A are well suited for low voltage and battery powered applications where small package size is required without compromising power handling and fast switching.
Technical/Catalog Information | FDR4420A |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 11A |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 11A, 10V |
Input Capacitance (Ciss) @ Vds | 2560pF @ 15V |
Power - Max | 900mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 33nC @ 5V |
Package / Case | SSOT-8 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDR4420A FDR4420A FDR4420ACT ND FDR4420ACTND FDR4420ACT |