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FDR8308, FDR8308P, FDR8321L

Table of contents:
Info of FDR8308
Info of FDR8308P
Info of FDR8321L

FDR8308, FDR8308P, FDR8321L Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SSOP-8 D/C:05+

FDR8308, FDR8308P, FDR8321L Datasheet download

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Part Number: FDR8308

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SSOP-8

D/C: 05+

Description: MOSFET P-CH DUAL 20V 3.2A SSOT-8

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FDR8308P Parameters

Technical/Catalog Information	FDR8308P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3.2A
Rds On (Max) @ Id, Vgs	50 mOhm @ 3.2A, 4.5V
Input Capacitance (Ciss) @ Vds	1240pF @ 10V
Power - Max	800mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	19nC @ 4.5V
Package / Case	SuperSOT-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDR8308P FDR8308P FDR8308PTR ND FDR8308PTRND FDR8308PTR

FDR8308P General Description

The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.

FDR8308P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	±8	V
I_D	Draint Current - Continuous (Note 1)	-3.2	A
I_D	- Pulsed	-20	A
P_D	Power Dissipation for Single Operation (Note 1a)	0.8	W
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +150	°C

FDR8308P Features

·-3.2 A, -20 V. RDS(ON) = 0.050 W @ VGS = -4.5 V,
RDS(ON) = 0.070 W @ VGS = -2.5 V.
·Low gate charge (13nC typical).
·High performance trench technology for extremely low RDS(ON).
·SuperSOTTM-8 package: small footprint (40% less than SO-8); low profile(1mmthick); maximum power comparable to SO-8.

FDR8321L General Description

This device is designed for configuration as a load switch and is particularly suited for Power Management in portable battery powered electronic equipment. Designed to operate from 2.5V to 8V input and supply up to 2.9A. The device features a small N-Channel MOSFET (Q1) together with a large P-Channel power MOSFET (Q2) in a single SuperSOTTM-8 package.

FDR8321L Maximum Ratings

Symbol	Parameter	FDR8321L	Units
V_IN	Input Voltage Range	2.5 - 8	V
V_ON/OFF	On/Off Voltage Range	1.5 - 8	V
I_L	Load Current @ VDROP= 0.2V - Continuous (Note 1)	2.9	A
I_L	- Pulsed	10	A
P_D	Maximum Power Dissipation (Note 2)	0.8	W
T_J,T_STG	Operating and Storage Temperature Range	-55 to 150	°C

FDR8321L Features

·VDROP = 0.2V @ VIN= 5V, IL= 2.9A. RDS(ON) = 0.070 W
VDROP = 0.2V @ VIN= 2.5V, IL= 2A. RDS(ON) = 0.105 W.
·VON/OFF Zener protection for ESD ruggedness (>6KV Human Body Model).
·High density cell design for extremely low on-resistance.

FDR8321L Connection Diagram

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