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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "high side" synchronous rectifier operation, providing an extremely low RDS(ON) and fast switching in a small package.
FDR6678A Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current Continuous (Note 1a) Pulsed
7.5
A
40
PD
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)
1.8
W
1.0
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
FDR6678A Features
• 7.5 A, 30 V. RDS(ON) = 24 m @ VGS = 4.5V RDS(ON) = 20 m @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • Fast switching, low gate charge • High power and current in a smaller footprint than
FDR6678A Typical Application
• DC/DC converter
FDR6678A Connection Diagram
FDR8305N Parameters
Technical/Catalog Information
FDR8305N
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25° C
4.5A
Rds On (Max) @ Id, Vgs
22 mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) @ Vds
1600pF @ 10V
Power - Max
800mW
Packaging
Tape & Reel (TR)
Gate Charge (Qg) @ Vgs
23nC @ 4.5V
Package / Case
SuperSOT-8
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDR8305N FDR8305N
FDR8305N General Description
These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
FDR8305N Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current Continuous (Note 1a) Pulsed
4.5
A
20
PD
Power Dissipation for Single Operation (Note 1a)
0.8
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
FDR8305N Features
• 4.5 A, 20 V. RDS(ON) = 0.022 @ VGS = 4.5 V RDS(ON) = 0.028 @ VGS = 2.5 V. • Low gate charge (16.2nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS(ON). • Small footprint (38% smaller than a standard SO-8);low profile package (1 mm thick); power handling capability similar to SO-8.