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CXK582000TM, CXK582000TM-58LL, CXK582000TM-70LL

CXK582000TM, CXK582000TM-58LL, CXK582000TM-70LL Selling Leads, Datasheet

MFG:SONY  Package Cooled:3000  D/C:98+

CXK582000TM, CXK582000TM-58LL, CXK582000TM-70LL Picture

CXK582000TM, CXK582000TM-58LL, CXK582000TM-70LL Datasheet download

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Part Number: CXK582000TM

 

MFG: SONY

Package Cooled: 3000

D/C: 98+

 

 

 
 
 
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CXK582000TM Suppliers

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About CXK582000TM

PDF/DataSheet Download

Datasheet: CXK582000TM

File Size: 210225 KB

Manufacturer: SONY [Sony Corporation]

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CXK582000TM-58LL Suppliers

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About CXK1012

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Datasheet: CXK1012

File Size: 484995 KB

Manufacturer: SONY [Sony Corporation]

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CXK582000TM-70LL Suppliers

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About CXK1012

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Datasheet: CXK1012

File Size: 484995 KB

Manufacturer: SONY [Sony Corporation]

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CXK582000TM General Description

The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits.

A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.

Special feature are low power consumption and high speed and board package line-up.

The CXK582000TM/YM/M is a suitable RAM for portable equipment with battery back up.

CXK582000TM Maximum Ratings

Item Symbol Rating Unit
Supply voltage VCC 0.5 to +7.0 V
Input voltage VIN 0.5* to VCC +0.5
Input and output voltage VI/O 0.5* to VCC +0.5
Allowable power dissipation PD 0.7 W
Operating temperature Topr 0 to +70 °C
Storage temperature Tstg 55 to +150
Soldering temperature Tsolder 235 • 10 °C • s

CXK582000TM Features

• Fast access time (Access time)
  -85LL 85ns (Max.)
  -10LL 100ns (Max.)
• Low standby current 40µA (Max.)
• Low data retention current 24µA (Max.)
• Single +5V supply: 4.5V to 5.5V.
• Low voltage date retention : 2.0V (Min.)
• Broad package line-up
  CXK582000TM/YM 8mm ×20mm 32 pin
  TSOP Package
  CXK582000M 525mil 32 pin
  SOP Package

CXK582000TM Connection Diagram

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