CXK582000M

Features:

• Fast access time (Access time)
  -85LL 85ns (Max.)
  -10LL 100ns (Max.)
• Low standby current 40µA (Max.)
• Low data retention current 24µA (Max.)
• Single +5V supply: 4.5V to 5.5V.
• Low voltage date retention : 2.0V (Min.)
• Broad package line-up
  CXK582000TM/YM 8mm ×20mm 32 pin
  TSOP Package
  CXK582000M 525mil 32 pin
  SOP Package


Pinout

Specifications

Item	Symbol	Rating	Unit
Supply voltage	VCC	0.5 to +7.0	V
Input voltage	VIN	0.5* to VCC +0.5
Input and output voltage	VI/O	0.5* to VCC +0.5
Allowable power dissipation	PD	0.7	W
Operating temperature	Topr	0 to +70	°C
Storage temperature	Tstg	55 to +150
Soldering temperature	Tsolder	235 • 10	°C • s

Description

The CXK582000M is a high speed CMOS static RAM organized as 262144-words by 8 bits.

A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.

Special feature are low power consumption and high speed and board package line-up.

The CXK582000M is a suitable RAM for portable equipment with battery back up.