CXK581000AM

Features:

• Fast access time:
  CXK581000ATM/AYM/AM/AP (Access time)
  -55LL/55SL 55ns (Max.)
  -70LL/70SL 70ns (Max.)
  -10LL/10SL 100ns (Max.)
• Low standby current:
  CXK581000ATM/AYM/AM/AP
  -55LL/70LL/10LL 20µA (Max.)
  -55SL/70SL/10SL 12µA (Max.)
• Low data retention current
  CXK581000ATM/AYM/AM/AP
  -55LL/70LL/10LL 12µA (Max.)
  -55SL/70SL/10SL 4µA (Max.)
• Single +5V supply: +5V ±10%
• Low voltage data retention: 2.0V (Min.)
• Broad package line-up
• CXK581000ATM/AYM
  8mm×20mm 32 pin TSOP package
• CXK581000AM 525mil 32 pin SOP package
• CXK581000AP 600mil 32 pin DIP package


Pinout

Specifications

Item	Symbol		Rating	Unit
Supply voltage	VCC		0.5 to +7.0	V
Input voltage	VIN		0.5* to VCC +0.5
Input and output voltage	VI/O		0.5* to VCC +0.5
Allowable power dissipation	PD	CXK581000AP	1.0	W
		CXK581000ATM/AYM/AM	0.7
Operating temperature	Topr		0 to +70	°C
Storage temperature	Tstg		55 to +150
Soldering temperature	Tsolder	CXK581000AP	260 • 10
		CXK581000ATM/AYM/AM	235 • 10	°C • s

Description

The CXK581000AM is a high speed CMOS static RAM organized as 131072-words by 8 bits.

A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability.

Special feature are low power consumption, high speed and broad package line-up.

The CXK581000AM ia a suitable RAM for portable equipment with battery back up.