DescriptionThe CXK58257CTM is a kind of 262,144 bits high speed CMOS static RAM organized as 32768 words by 8 bits. It is a suitable RAM for portable equipment with battery back up. There are some features CXK58257CTMas follows: (1)single +5 V supply: 5 V±10%; (2)fast access time; (3)low standby ...
CXK58257CTM: DescriptionThe CXK58257CTM is a kind of 262,144 bits high speed CMOS static RAM organized as 32768 words by 8 bits. It is a suitable RAM for portable equipment with battery back up. There are some ...
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Features: • Fast access time: CXK581000ATM/AYM/AM/AP (Access time) -55LL/55SL 55ns (Max.) -7...
Features: • Fast access time: CXK581000ATM/AYM/AM/AP (Access time) -55LL/55SL 55ns (Max.) -7...
Features: • Fast access time: CXK581000ATM/AYM/AM/AP (Access time) -55LL/55SL 55ns (Max.) -7...
The CXK58257CTM is a kind of 262,144 bits high speed CMOS static RAM organized as 32768 words by 8 bits. It is a suitable RAM for portable equipment with battery back up.
There are some features CXK58257CTM as follows: (1)single +5 V supply: 5 V±10%; (2)fast access time; (3)low standby current: 5A (max); (4)low data retention current: 3A (max); (5)direct TTL compatible: all inputs and outputs; (6)data retention voltage: 2.0 V (min); (7)broad package line-up.
What comes next is about the absolute maximum ratings (Ta=25, GND=0 V) CXK58257CTM: (1)supply voltage, VCC: -0.5 to 7.0 V; (2)input voltage, VIN: -0.5 to VCC+0.5 V; (3)input and output voltage, VI/O: -0.5 to VCC+0.5 V; (4)allowable power dissipation, PD: 0.7 W; (5)operating temperature, Topr: 0 to +70; (6)storage temperature, Tstg: -55 to +150; (7)soldering temperature, 10 sec, Tsolder: 235. Then is about the DC recommended operating conditions (Ta=0 to +70, GND=0 V): (1)supply voltage, VCC: 4.5 V min, 5.0 V typ and 5.5 V max; (2)input high voltage, VIH CXK58257CTM: 2.2 V min and VCC+0.3 V; (3)input low voltage, VIL: -0.3 V min and 0.8 V max.