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CXK58512M

Features: • Fast access time (Access time) -55LL 55ns (Max.) -70LL 70ns (Max.) -10LL 100ns (Max.)• Low standby current 10µA (Max.)• Low data retention current 6µA (Max.)• Single +5V supply: +5V ± 10%• Low voltage data retention: 2.0V (Min.)• Broad pa...

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SeekIC No. : 004318685 Detail

CXK58512M: Features: • Fast access time (Access time) -55LL 55ns (Max.) -70LL 70ns (Max.) -10LL 100ns (Max.)• Low standby current 10µA (Max.)• Low data retention current 6µA (Max....

CXK58512M Data Sheet

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Part Number:
CXK58512M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Fast access time (Access time)
   -55LL 55ns (Max.)
   -70LL 70ns (Max.)
   -10LL 100ns (Max.)
• Low standby current 10µA (Max.)
• Low data retention current 6µA (Max.)
• Single +5V supply: +5V ± 10%
• Low voltage data retention: 2.0V (Min.)
• Broad package line-up
   CXK58512TM 8mm ×20mm 32 pin TSOP package
   CXK58512M 525mil 32 pin SOP Package


Pinout

Connection Diagram

Connection Diagram




Specifications

Item Symbol Rating Unit
Supply voltage VCC 0.5 to +4.6 V
Input voltage VIN 0.5*1 to VCC + 0.5 V
Input and output voltage VI/O 0.5*1 to VCC + 0.5 V
Allowable power dissipation PD 0.7 W
Operating temperature Topr 0 to +70 °C
Storage temperature Tstg 55 to +150 °C
Soldering temperature ` time Tsolder 235 ` 10 °C ` s



Description

The CXK58512M is a high speed CMOS static RAM organized as 65536-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.
Special feature are low power consumption, high speed.

The CXK58512M is a suitable RAM for portable equipment with battery back up.


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