DescriptionThe CXK58257P is a 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and operates from a single 5 V supply.This device is suitable for use in high speed and low power applications in which battery back up for nonvolatility is required. Features of the CXK58257...
CXK58257P: DescriptionThe CXK58257P is a 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and operates from a single 5 V supply.This device is suitable for use in high speed and low ...
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Features: • Fast access time: CXK581000ATM/AYM/AM/AP (Access time) -55LL/55SL 55ns (Max.) -7...
Features: • Fast access time: CXK581000ATM/AYM/AM/AP (Access time) -55LL/55SL 55ns (Max.) -7...
Features: • Fast access time: CXK581000ATM/AYM/AM/AP (Access time) -55LL/55SL 55ns (Max.) -7...
The CXK58257P is a 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and operates from a single 5 V supply.This device is suitable for use in high speed and low power applications in which battery back up for nonvolatility is required.
Features of the CXK58257P are:(1)fast access time; (2)low power operation; (3)single +5V supply; (4)fully static memory; (5)equal access and cycle time; (6)common data input and output :three state output; (7)directly TTL compatible: all inputs and outputs; (8)low voltage data retention:2.0V min; (9)availble in 28 pin 600-mil DIP,300-mil DIP and 450-mil SOP.
The absolute maximum ratings of the CXK58257P can be summarized as:(1): supply voltage(Vcc) is -0.5 V to +7.0 V; (2): input voltage(Vin) is -0.5 V to Vcc+0.5 V; (3): input and output voltage(Vi/o) is -0.5 V to Vcc+0.5V; (4): allowable power dissipation(PD) is 1.0W; (5): operating temperature(Topr) is 0 to 70; (6): storage temperature(Tstg) is -55 to +150; (7): soldering temperature(Tsolder) is 260,10 sec.