CMT10N10, CMT10N10N220, CMT10N40 Selling Leads, Datasheet
MFG:CET Package Cooled:TO- D/C:05/06
CMT10N10, CMT10N10N220, CMT10N40 Datasheet download
Part Number: CMT10N10
MFG: CET
Package Cooled: TO-
D/C: 05/06
CMT10N10, CMT10N10N220, CMT10N40
- Table of contents:
Info of CMT10N10
Info of CMT10N10N220
Info of CMT10N40
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About CMT10N10
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Datasheet: CMT10N10
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About CMT02N60
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Datasheet: CMT02N60
File Size: 336790 KB
Manufacturer: ETC [ETC]
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About CMT10N40
PDF/DataSheet Download
Datasheet: CMT10N40
File Size: 162247 KB
Manufacturer: ETC [ETC]
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CMT10N10 General Description
This advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
CMT10N10 Maximum Ratings
|
Parameter |
Symbol |
Limit |
Unit |
| Gate-to-Source Voltage - Continue - Non-repetitive |
VGS |
±20 |
V |
|
VGSM |
±40 | ||
| Drain to Current - Continuous - Pulsed |
ID |
10 |
A |
|
35
| |||
|
IDM | |||
| Total Power Dissipation Derate above 25 |
PD |
40 |
W |
|
0.32 |
W/°C | ||
| Operating and Storage Temperature Range |
TJ,TSTG |
-55 to 150 |
°C |
| Single Pulse Drain-to-Source Avalanche Energy - TJ = 25 (VDD = 100V, VGS = 10V, IL = 10A, L = 1.38mH, RG = 25) |
EAS |
69 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
JC JA |
3.13 100 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds |
TL |
260 |
°C |
CMT10N10 Features
·Avalanche Energy Specified
·Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
·Diode is Characterized for Use in Bridge Circuits
·IDSS and VDS(on) Specified at Elevated Temperature
·Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
·Diode is Characterized for Use in Bridge Circuits
·IDSS and VDS(on) Specified at Elevated Temperature
CMT10N10 Connection Diagram
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