CMT06N60, CMT1101-G, CMT14N50 Selling Leads, Datasheet
Package Cooled:TO-220 D/C:05+
CMT06N60, CMT1101-G, CMT14N50 Datasheet download
Part Number: CMT06N60
MFG: --
Package Cooled: TO-220
D/C: 05+
CMT06N60, CMT1101-G, CMT14N50
- Table of contents:
Info of CMT06N60
Info of CMT1101-G
Info of CMT14N50
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About CMT06N60
PDF/DataSheet Download
Datasheet: CMT06N60
File Size: 196102 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About CMT02N60
PDF/DataSheet Download
Datasheet: CMT02N60
File Size: 336790 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About CMT14N50
PDF/DataSheet Download
Datasheet: CMT14N50
File Size: 343961 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
CMT06N60 General Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
CMT06N60 Features
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDDS Specified at Elevated Temperature
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDDS Specified at Elevated Temperature
CMT06N60 Connection Diagram
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