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CMT18N20

Features: `Silicon Gate for Fast Switching Speeds`Low RDS(on) to Minimize On-Losses. Specified at Elevated Temperature` Rugged SOA is Power Dissipation Limited`Source-to-Drain Characterized for Use With Inductive LoadsPinoutSpecifications Rating Symbol Value Unit Drain to Current - Con...

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SeekIC No. : 004315027 Detail

CMT18N20: Features: `Silicon Gate for Fast Switching Speeds`Low RDS(on) to Minimize On-Losses. Specified at Elevated Temperature` Rugged SOA is Power Dissipation Limited`Source-to-Drain Characterized for Use...

CMT18N20 Data Sheet

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Part Number:
CMT18N20
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

`Silicon Gate for Fast Switching Speeds
`Low RDS(on) to Minimize On-Losses. Specified at Elevated Temperature
` Rugged SOA is Power Dissipation Limited
`Source-to-Drain Characterized for Use With Inductive Loads


Pinout

Connection Diagram


Specifications

Rating Symbol Value Unit
Drain to Current - Continuous ID  18 A
- Pulsed IDM  72
Gate-to-Source Voltage - Continue VGS ±20 V
- Non-repetitive VGSM ±40 V
Total Power Dissipation PD 125 W
Derate above 25 1.00 W/
Operating and Storage Temperature Range TJ, TSTG -55 to 150
Single Pulse Drain-to-Source Avalanche Energy - TJ = 25
(VDD = 100V, VGS = 10V, IL = 18A, L = 1.38mH, RG = 25)		 EAS 224 mJ
Thermal Resistance - Junction to Case JC 1.00 /W
- Junction to Ambient JA 62.5
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds TL 260
(1) Pulse Width and frequency is limited by TJ(max) and thermal response


Description

CMT18N20 Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.




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