CMT06N60

Features:

Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I_DDS Specified at Elevated Temperature



Pinout




Specifications




Description

This high voltage MOSFET CMT06N60 uses an advanced termination scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this advanced MOSFET CMT06N60 is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.