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CM200DY-12DFH, CM200DY-12E, CM200DY-12H

Table of contents:
Info of CM200DY-12DFH
Info of CM200DY-12E
Info of CM200DY-12H

CM200DY-12DFH, CM200DY-12E, CM200DY-12H Selling Leads, Datasheet

MFG:MIT Package Cooled:MODULE D/C:2+

CM200DY-12DFH, CM200DY-12E, CM200DY-12H Picture

CM200DY-12DFH, CM200DY-12E, CM200DY-12H Datasheet download

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Part Number: CM200DY-12DFH

MFG: MIT

Package Cooled: MODULE

D/C: 2+

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CM200DY-12H General Description

Mitsubishi IGBT Modules are designed for the application in switching applications.Each module includes two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,offering simplified system assembly and thermal management.

It has many unique features: The first one is low drive power.The second one is low VCE(sat).The third one is discrete super-fast recovery.The forth one is free-wheel diode.The fifth one is high frequency operation.The sixth one is isolated baseplate for easy heat sinking.

There are some maximum ratings about it(Tj = 25 °C unless otherwise specified).junction temperature(Tj) is40°C to 150°C.Storage Temperature (Tstg ) is40°C to 125 °C.Collector-Emitter Voltage (G-E SHORT)(VCES) is 600 Volts.Gate-Emitter Voltage (C-E SHORT)(VGES) is ±20 Volts.Collector Current (TC = 25°C)(IC) is 200 Amperes.Peak Collector Current(ICM) is 400 Amperes.Emitter Current** (TC = 25°C)(IE) is 200 Amperes.Weight is 270 Grams.Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)(Viso) is 2500 Vrms.

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