MFG:Powerex Inc Category:Discrete Semiconductor Products D/C:07+
CM200DU-24F, CM200DU-24H, CM200DU-24NFH Datasheet download
Category: Discrete Semiconductor Products
MFG: Powerex Inc
Package Cooled:
D/C: 07+
Description: IGBT MOD DUAL 1200V 200A F SER
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PDF/DataSheet Download
Datasheet: CM200DU-24F
File Size: 68429 KB
Manufacturer: POWEREX [Powerex Power Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: CM200DU-24H
File Size: 349068 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: CM200DU-24NFH
File Size: 52823 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | CM200DU-24F |
| Vendor | Powerex Inc |
| Category | Discrete Semiconductor Products |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | CM200DU 24F CM200DU24F |
CM200DU-24F is a type of MITSUBISHI moduels which can be applied to high power switching use.
There are some absolute maximum ratings about it.Collector-emitter voltage(VCES) is 1200 V(G-E short).Gate-emitter voltage(VGES) is ±20 V(C-E short).Maximum collector dissipation(PC) is 830 W(TC is 25).Junction temperature(Tj) is -40 to 150.Storage temperature(Tstg) is -40 to 125.Weight is 400 g typ.Otherwise,there are also some electrical characteristics about it.Collector cutoff current(ICES) is 1 mA max when VCE is equal to VCES and VGE is 0 V.Gate leakage current(IGES) is 40 uA max when VGE is equal to VCES and VCE is 0.
Well, this is the simple introduction to this kind of products , if you want to know more about it, please pay more attention to our web!
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half- bridge configuration with each tran- sistor having a reverse-connected super-fast recovery free-wheel diode. All components and inter- connects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
| Ratings | Symbol | CM900HB-90H | Units |
| Junction Temperature | Tj | -40 to 150 | °C |
| Storage Temperature | Tstg | -40 to 125 | °C |
| Collector-Emitter Voltage (G-E SHORT) | VCES | 1200 | Volts |
| Gate-Emitter Voltage(G-E SHORT) | VGES | ±20 | Volts |
| Collector Current (Tc = 25°C) | IC | 200 | Amperes |
| Peak Collector Current(Tj 150°C) | ICM | 400* | Amperes |
| Emitter Current** (TC = 25°C) | IE | 200 | Amperes |
| Peak Emitter Current** | IEM | 400* | Amperes |
| Maximum Collector Dissipation (Tc = 25°C) | Pc | 1130 | Watts |
| Mounting Torque, M5 Main Terminal | - | 40 | in-lb |
| Mounting Torque, M6 Mounting | - | 40 | in-lb |
| Weight | - | 400 | Grams |
| Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) | Viso | 2500 | Vrms |
| Symbol | Parameter | Conditions | Ratings |
Unit |
| VCES | Collector-emitter voltage | G-E Short | 1200 |
V |
| VCES | Gate-emitter voltage | G-E Short | ±20 |
V |
| IC | Collector current | DC, TC = 84°C*1 | 200 |
A |
| ICM | Pulse (Note 2) | 400 |
A |
|
| IE (Note 1) | Emitter current | 200 |
A |
|
| IEM (Note 1) | Pulse (Note 2) | 400 |
A |
|
| PC (Note 3) | Maximum collector dissipation | TC = 25°C | 830 |
W |
| PC' (Note 3) | Maximum collector dissipation | TC'= 25°C*4 | 1300 |
W |
| Tj | Junction temperature | 40 ~ +150 |
°C |
|
| Tstg | Storage temperature | 40 ~ +125 |
°C |
|
| Viso | Isolation voltage | Main Terminal to base plate, AC 1 min. | 2500 |
V |
| - | Mounting torque | Main Terminal M6 | 3.5 ~ 4.5 |
N • m |
| - | Mounting holes M6 | 3.5 ~ 4.5 |
N • m |
|
| - | Weight | Typical value | 400 |
g |
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