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Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half- bridge configuration with each tran- sistor having a reverse-connected super-fast recovery free-wheel diode. All components and inter- connects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
CM200DU-12H Maximum Ratings
Ratings
Symbol
CM900HB-90H
Units
Junction Temperature
Tj
-40 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
600
Volts
Gate-Emitter Voltage(G-E SHORT)
VGES
±20
Volts
Collector Current (Tc = 25°C)
IC
200
Amperes
Peak Collector Current
ICM
400*
Amperes
Emitter Current** (TC = 25°C)
IE
200
Amperes
Peak Emitter Current**
IEM
400*
Amperes
Maximum Collector Dissipation (Tc = 25°C,Tj 150°C)
Pc
650
Watts
Mounting Torque, M5 Main Terminal
-
31
in-lb
Mounting Torque, M6 Mounting
-
40
in-lb
Weight
-
310
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
2500
Vrms
CM200DU-12H Features
Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking
CM200DU-12H Typical Application
AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies