CM200DU-12F

Voltage - Collector Emitter Breakdown (Max): 600V
Input: Standard
NTC Thermistor: No
Mounting Type: Chassis Mount
Configuration: Half Bridge
Series: IGBTMOD™
Manufacturer: Powerex Inc
Current - Collector Cutoff (Max): 1mA
Package / Case: Module
Supplier Device Package: Module
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
Current - Collector (Ic) (Max): 200A
IGBT Type: Trench
Power - Max: 590W
Input Capacitance (Cies) @ Vce: 54nF @ 10V


Features:

Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery Free-Wheel Diode
Isolated Baseplate for Easy Heat Sinking




Application

AC Motor Control
UPS
Battery Powered Supplies




Specifications

Ratings	Symbol	CM900HB-90H	Units
Junction Temperature	Tj	-40 to 150	°C
Storage Temperature	Tstg	-40 to 125	°C
Collector-Emitter Voltage (G-E SHORT)	VCES	600	Volts
Gate-Emitter Voltage(G-E SHORT)	VGES	±20	Volts
Collector Current (Tc = 25°C)	IC	200	Amperes
Peak Collector Current	ICM	400*	Amperes
Emitter Current** (TC = 25°C)	IE	200	Amperes
Peak Emitter Current**	IEM	400*	Amperes
Maximum Collector Dissipation (Tc = 25°C,Tj 150°C)	Pc	590	Watts
Mounting Torque, M5 Main Terminal	-	31	in-lb
Mounting Torque, M6 Mounting	-	40	in-lb
Weight	-	310	Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)	Viso	2500	Vrms

Description

The CM200DU-12F is designed as one kind of powerex IGBTMOD™ module that can be used in (1)AC motor control; (2)UPS; (3)battery powered supplies applications. This device consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. Features of the CM200DU-12F are:(1)low drive power; (2)low VCE(sat); (3)discrete super-fast recovery free-wheel diode; (4)isolated baseplate for easy heat sinking.

The absolute maximum ratings of the CM200DU-12F can be summarized as:(1)Junction Temperature: -40 to 150 °C;(2)Storage Temperature: 40 to 125 °C;(3)Collector-Emitter Voltage (G-E SHORT): 600 Volts;(4)Gate-Emitter Voltage (C-E SHORT): ±20 Volts;(5)Collector Current (Tc = 25°C): 200 Amperes;(6)Peak Collector Current: 400 Amperes;(7)Emitter Current (Tc= 25°C): 200 Amperes;(8)Peak Emitter Current: 400 Amperes;(9)Maximum Collector Dissipation (Tc = 25°C, Tj 150°C): 590 Watts;(10)Mounting Torque, M5 Main Terminal: 31 in-lb;(11)Mounting Torque, M6 Mounting: 40 in-lb;(12)Weight: 310 Grams.

The electrical characteristics of the CM200DU-12F can be summarized as:(1)Collector-Cutoff Current: 1 mA;(2)Gate Leakage Current: 0.5 A;(3)Gate-Emitter Threshold Voltage: 4.5 to 7.5 Volts;(4)Total Gate Charge: 400 nC;(5)Emitter-Collector Voltage: 2.6 Volts. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half- bridge configuration with each tran- sistor having a reverse-connected super-fast recovery free-wheel diode. All components and inter- connects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.




Parameters:

Technical/Catalog Information	CM200DU-12F
Vendor	Powerex Inc
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	CM200DU 12F CM200DU12F