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BSS209PWL6327, BSS223PW, BSS225

Table of contents:
Info of BSS209PWL6327
Info of BSS223PW
Info of BSS225

BSS209PWL6327, BSS223PW, BSS225 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:SOT323-3 D/C:0

BSS209PWL6327, BSS223PW, BSS225 Datasheet download

Five Points

Part Number: BSS225

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: SOT323-3

D/C: 0

Description: MOSFET N-CHAN ENH 600V SOT-89

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BSS223PW Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current A T_A= 25 °C T_A= 70 °C	I_D	-0.39 -0.31	A
Pulsed drain current T_A = 25 °C	I _{D puls}	-1.56	A
Avalanche energy, single pulse I_D = -0.33 A , V_DD = -25 V, R_GS= 25	E_AS	1.4	mJ
Reverse diode dv/dt I_S = -0.33 A, V_DS= -48 V, di/dt = 200 A/s, T_jmax = 150 °C	dv/dt	-6	kV/s
Gate source voltage	V_GS	±12	V
Power dissipation T_A = 25 °C	P_tot	0.25	W
Operating and storage temperature	T_j , T_stg	-55...+150	°C
IEC climatic category; DIN IEC 68-1		55/150/56

BSS223PW Features

• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated

BSS225 Parameters

Technical/Catalog Information	BSS225
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	90mA
Rds On (Max) @ Id, Vgs	45 Ohm @ 90mA, 10V
Input Capacitance (Ciss) @ Vds	131pF @ 25V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	5.8nC @ 10V
Package / Case	SOT-89
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSS225 BSS225

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