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BSS 119

Features: • N channel• Enhancement mode• VGS(th) = 1.6 ...2.6 VSpecifications Parameter Symbol Value Unit Drain source voltage VDS 100 V Drain-gate voltage RGS = 20 k VDGR 100 V Gate source voltage VGS ± 14 V Gate-source peak ...

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BSS 119: Features: • N channel• Enhancement mode• VGS(th) = 1.6 ...2.6 VSpecifications Parameter Symbol Value Unit Drain source voltage VDS 100 V Drain-gate vol...

BSS 119 Data Sheet

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Part Number:
BSS 119
Supply Ability:
5000

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  • 1~5000
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• N channel
• Enhancement mode
• VGS(th) = 1.6 ...2.6 V


Specifications

Parameter
Symbol
Value
Unit
Drain source voltage
VDS
100
V
Drain-gate voltage RGS = 20 k
VDGR
100
V
Gate source voltage
VGS
± 14
V
Gate-source peak voltage,aperiodic
Vgs
± 20
V
Continuous drain current TA = 28 °C
ID
0.17
A
DC drain current, pulsed TA = 25 °C
IDpuls
0.68
A
Power dissipation TA = 25 °C
Ptot
0.36
W
Chip or operating temperature
Tj
-55 ... + 150
°C
Storage temperature
Tstg
-55 ... + 150
°C
Thermal resistance, chip to ambient air
RthJA
350
K/W
Thermal resistance, chip to ambient air 1)
RthJA
285
K/W
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm


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