Features: • P channel• Enhancement mode• Logic Level• VGS(th) = -0.8...-2.0 VSpecifications Parameter Symbol Value Unit Diode reverse voltage VDS -50 V Drain-gate voltage RGS = 20 kW VDGR -50 V Gate source voltage VGS ± 2...
BSS 110: Features: • P channel• Enhancement mode• Logic Level• VGS(th) = -0.8...-2.0 VSpecifications Parameter Symbol Value Unit Diode reverse voltage VDS -...
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Parameter |
Symbol |
Value |
Unit |
Diode reverse voltage |
VDS |
-50 |
V |
Drain-gate voltage RGS = 20 kW |
VDGR |
-50 |
V |
Gate source voltage |
VGS |
± 20 |
V |
Continuous drain current TA = 35 °C |
ID |
-0.17 |
A |
DC drain current, pulsed TA = 25 °C |
IDpuls |
-0.68 |
A |
Power dissipation TA = 25 °C |
Ptot |
0.63 |
W |