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BSS10, BSS100, BSS101

Table of contents:
Info of BSS10
Info of BSS100
Info of BSS101

BSS10, BSS100, BSS101 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:CAN3 D/C:05+

BSS10, BSS100, BSS101 Datasheet download

Five Points

Part Number: BSS100

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: CAN3

D/C: 05+

Description: MOSFET N-CH 100V 5 OHM TO92

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BSS100 Parameters

Technical/Catalog Information	BSS100
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	220mA
Rds On (Max) @ Id, Vgs	6 Ohm @ 220mA, 10V
Input Capacitance (Ciss) @ Vds	60pF @ 25V
Power - Max	630mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	2nC @ 10V
Package / Case	TO-92
FET Feature	Standard
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSS100 BSS100

BSS100 General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance. This product is particularly suited to low voltage, low current applications, such as small servo motor controls, power MOSFET gate drivers, and other switching applications.

BSS100 Maximum Ratings

Symbol	Parameter	BSS100	BSS123	Units
V_DSS	Drain-Source Voltage	100		V
V_DGR	Drain-Gate Voltage (R_GS < 20KW)	100		V
V_GSS	Gate-Source Voltage - Continuous ± 14 V - Non Repetitive (T_P < 50 mS)	± 14		V
V_GSS		± 20		V
I_D	Drain Current - Continuous 0.22 0.17 A - Pulsed	0.22	0.17	A
I_D	Drain Current - Continuous 0.22 0.17 A - Pulsed	0.9	0.68	A
P_D	Total Power Dissipation @ T_A= 25°C	0.63	0.36	W
T_J,T_STG	Operating and Storage Temperature Range	-55 to 150		°C
T_L	Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds	300		°C
THERMAL CHARACTERISTICS
R_JA	Thermal Resistacne, Junction-to-Ambient	200	350	°C/W

BSS100 Features

·BSS100: 0.22A, 100V. R_DS(ON) = 6W @ V_GS = 10V. BSS123: 0.17A, 100V. R_DS(ON) = 6W @ V_GS = 10V
·High density cell design for extremely low R_DS(ON).
·Voltage controlled small signal switch.
·Rugged and reliable.

BSS101 Maximum Ratings

Parameter	Symbol	Values	Unit
Drain source voltage	V_DS	240	V
Drain-gate voltage R_GS= 20 kW	V_DGR	240
Gate source voltage	V_GS	± 14
Gate-source peak voltage,aperiodic	V_gs	± 20
Continuous drain current T_A = 33 °C	I_D	0.13	A
DC drain current, pulsed T_A= 25 °C	D_puls	0.52	A
Power dissipation T_A = 25 °C	P_tot	0.63	W

BSS101 Features

• N channel
• Enhancement mode
• Logic Level
• V_GS(th) = 0.8...2.0V

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