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BSP61, BSP613, BSP613P

Table of contents:
Info of BSP61
Info of BSP613
Info of BSP613P

BSP61, BSP613, BSP613P Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

BSP61, BSP613, BSP613P Datasheet download

Five Points

Part Number: BSP613P

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: .

D/C: 06+

Description: MOSFET P-CHAN 60V SOT-223

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BSP613P Parameters

Technical/Catalog Information	BSP613P
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	2.9A
Rds On (Max) @ Id, Vgs	130 mOhm @ 2.9A, 10V
Input Capacitance (Ciss) @ Vds	875pF @ 25V
Power - Max	1.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	33nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSP613P BSP613P

BSP613P Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_A=25°C T_A=70°C	I_D	-2.9 -2.3	A
Pulsed drain current T_A=25°C	I_{D puls}	-11.6	A
Avalanche energy, single pulse I_D=2.9 A , V_DD=-25V, R_GS=25W	E_AS	150	mJ
Avalanche energy, periodic limited by T_jmax	E_AR	0.18	mJ
Reverse diode dv/dt I_S=-0.26A, V_DS=-200V, di/dt=-200A/s, T_jmax=150°C	dv/dt	6	kV/s
Gate source voltage	V_GS	± 20
Power dissipation T_A=25°C	P_tot	1.8	V
Operating and storage temperature	T_j, T_stg	-55... +150	W
IEC climatic category; DIN IEC 68-1		55/150/00	°C

BSP613P Features

· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
· Ideal for fast switching buck converter

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