Features: • N channel• Enhancement mode• VGS(th) = 1.5 ...2.5 VSpecifications Parameter Symbol Value Unit Drain source voltage VDS 600 V Drain-gate voltage RGS = 20 k VDGR 600 V Gate source voltage VGS ± 14 V Gate-source peak ...
BSP 125: Features: • N channel• Enhancement mode• VGS(th) = 1.5 ...2.5 VSpecifications Parameter Symbol Value Unit Drain source voltage VDS 600 V Drain-gate vol...
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Parameter |
Symbol |
Value |
Unit |
Drain source voltage |
VDS |
600 |
V |
Drain-gate voltage RGS = 20 k |
VDGR |
600 |
V |
Gate source voltage |
VGS |
± 14 |
V |
Gate-source peak voltage,aperiodic |
Vgs |
± 20 |
V |
Continuous drain current TA = 39 °C |
ID |
0.12 |
A |
DC drain current, pulsed TA = 25 °C |
IDpuls |
0.48 |
A |
Power dissipation TA = 25 °C |
Ptot |
1.7 |
W |
Chip or operating temperature |
Tj |
-55 ... + 150 |
°C |
Storage temperature |
Tstg |
-55 ... + 150 |
°C |
Thermal resistance, chip to ambient air |
RthJA |
72 |
K/W |
Thermal resistance, chip to ambient air 1) |
RthJA |
12 |
K/W |
DIN humidity category, DIN 40 040 |
E |
||
IEC climatic category, DIN IEC 68-1 |
55 / 150 / 56 |