Features: · VDS 600 V· ID 0.100 A· RDS(on) 60 W· N channel· Depletion mode· High dynamic resistance· Available grouped in VGS(th)Specifications Parameter Symbol Value Unit Drain source voltage VDS 600 V Drain-gate voltage RGS = 20 k VDGR 600 V Gate source v...
BSP 135: Features: · VDS 600 V· ID 0.100 A· RDS(on) 60 W· N channel· Depletion mode· High dynamic resistance· Available grouped in VGS(th)Specifications Parameter Symbol Value Unit Drain sou...
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Parameter |
Symbol |
Value |
Unit |
Drain source voltage |
VDS |
600 |
V |
Drain-gate voltage RGS = 20 k |
VDGR |
600 |
V |
Gate source voltage |
VGS |
± 14 |
V |
Gate-source peak voltage,aperiodic |
Vgs |
± 20 |
V |
Continuous drain current TA = 44 °C |
ID |
0.100 |
A |
DC drain current, pulsed TA = 25 °C |
IDpuls |
0.30 |
A |
Power dissipation TA = 25 °C |
Ptot |
1.7 |
W |
Operating and storage temperature range |
Tj, Tstg |
55 . + 150 |
°C |
Thermal resistance 1) chip-ambient |
RthJA |
72 |
K/W |
chip-soldering pointRthJS |
RthJS |
12 |
K/W |
DIN humidity category, DIN 40 040 |
E |
||
IEC climatic category, DIN IEC 68-1 |
55 / 150 / 56 |