BSP120, BSP121, BSP122 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:. D/C:06+
BSP120, BSP121, BSP122 Datasheet download
Part Number: BSP120
MFG: PHILIPS
Package Cooled: .
D/C: 06+
MFG:PHILIPS Package Cooled:. D/C:06+
BSP120, BSP121, BSP122 Datasheet download
MFG: PHILIPS
Package Cooled: .
D/C: 06+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: BSP120
File Size: 67372 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BSP121
File Size: 77274 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BSP122
File Size: 59972 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.
Drain-source voltage .........................VDS max. 200 V
Gate-source voltage (open drain) .................±VGSO max. 20 V
Drain current (DC).......................... ID max. 250 mA
Drain current (peak)........................ IDM max. 800 mA
Total power dissipation up to Tamb = 25 °C (note 1) ........Ptot max. 1.5 W
Storage temperature range ...................Tstg -65 to + 150 °C
Junction temperature .........................Tj max. 150 °C
Note:1. Device mounted on an epoxy printed-circuit board 40 mm X 40 mm X 1.5 mm; mounting pad for the drain lead min. 6 cm2.
N-channel enhancement mode vertical D-MOS transistor in aminiature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.
Drain-source voltage |
VDS |
max. |
200V |
Gate-source voltage (open drain) |
±VGSO |
max. |
20 V |
Drain current (DC) |
ID |
max. |
350 mA |
Drain current (peak) |
IDM |
max. |
1.2 A |
Total power dissipation up to Tamb = 25 °C (note 1) |
Ptot |
1.5W | |
Storage temperature range |
Tstg |
-65 to + 150 °C | |
Junction temperature |
Tj |
max. |
150 °C |
N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.