BSP108, BSP109, BSP110 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:. D/C:06+
BSP108, BSP109, BSP110 Datasheet download
Part Number: BSP108
MFG: PHILIPS
Package Cooled: .
D/C: 06+
MFG:PHILIPS Package Cooled:. D/C:06+
BSP108, BSP109, BSP110 Datasheet download
MFG: PHILIPS
Package Cooled: .
D/C: 06+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: BSP108
File Size: 66266 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BSP030
File Size: 111955 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BSP110
File Size: 77507 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers.
Drain-source voltage .........................VDS max. 80V
Gate-source voltage (open drain) .................±VGSO max .20V
Drain current (DC)......................... ID max. 500 mA
Drain current (peak)........................ IDM max. 1.0mA
Total power dissipation up to Tamb = 25 °C (note 1)........Ptot max. 1.5 W
Storage temperature range ..................Tstg -65 to + 150 °C
Junction temperature.........................Tj max. 150 °C
Note:1. Device mounted on an epoxy printed-circuit board 40 mm X 40 mm X 1.5 mm; mounting pad for the drain lead min. 6 cm2.
N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use in telephone ringer circuits and for application in relay, high-speed and line transformer drivers.
Drain-source voltage .........................VDS max. 80V
Drain-source voltage
(non-repetitive peak; tp £ 2 ms) ................VDS(SM) max. 100 V
Gate-source voltage (open drain) .................±VGSO max. 20 V
Drain current (DC).......................... ID max. 325 mA
Drain current (peak)........................ IDM max. 650mA
Total power dissipation up to Tamb = 25 °C (note 1) ........Ptot max. 1.5 W
Storage temperature range ...................Tstg -65 to + 150 °C
Junction temperature .........................Tj max. 150 °C
Note:1. Device mounted on an epoxy printed-circuit board 40 mm X 40 mm X 1.5 mm; mounting pad for the drain lead min. 6 cm2.