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BSP317E6327, BSP317P, BSP317PE6327

Table of contents:
Info of BSP317E6327
Info of BSP317P
Info of BSP317PE6327

BSP317E6327, BSP317P, BSP317PE6327 Selling Leads, Datasheet

MFG:Infineon Technologies (VA) Category:Discrete Semiconductor Products Package Cooled:SOT223 D/C:06+

BSP317E6327, BSP317P, BSP317PE6327 Datasheet download

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Part Number: BSP317PE6327

Category: Discrete Semiconductor Products

MFG: Infineon Technologies (VA)

Package Cooled: SOT223

D/C: 06+

Description: MOSFET P-CH 250V 430MA SOT223

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BSP317P Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_A=25°C T_A=70°C	I_D	-0.43 -0.34	A
Pulsed drain current T_A=25°C	I_{D puls}	-1.72	A
Reverse diode dv/dt I_S=-0.26A, V_DS=-200V, di/dt=-200A/s, T_jmax=150°C	dv/dt	6	kV/s
Gate source voltage	V_GS	± 20
Power dissipation T_A=25°C	P_tot	1.8	V
Operating and storage temperature	T_j, T_stg	-55... +150	W
IEC climatic category; DIN IEC 68-1		55/150/00	°C

BSP317P Features

• P-Channel
• Enhancement mode
• Logic Level
• dv/dt rated

BSP317PE6327 Parameters

Technical/Catalog Information	BSP317PE6327
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	430mA
Rds On (Max) @ Id, Vgs	4 Ohm @ 430mA, 10V
Input Capacitance (Ciss) @ Vds	262pF @ 25V
Power - Max	1.8W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	15.1nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSP317PE6327 BSP317PE6327 BSP317PE6327INCT ND BSP317PE6327INCTND BSP317PE6327INCT

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