BSP20, BSP204, BSP204A Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:. D/C:06+
BSP20, BSP204, BSP204A Datasheet download
Part Number: BSP20
MFG: PHILIPS
Package Cooled: .
D/C: 06+
MFG:PHILIPS Package Cooled:. D/C:06+
BSP20, BSP204, BSP204A Datasheet download
MFG: PHILIPS
Package Cooled: .
D/C: 06+
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PDF/DataSheet Download
Datasheet: BSP20
File Size: 43938 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: BSP204
File Size: 66824 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BSP204A
File Size: 66824 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCBO |
collector-base voltage BSP19 BSP20 |
open emitter |
400 300 |
V V | |
VCEO |
collector-emitter voltage BSP19 BSP20 |
open base |
350 250 |
V V | |
VEBO |
emitter-base voltage |
open collector |
5 |
V | |
IC |
collector current (DC) |
100 |
mA | ||
IB |
base current (DC) |
100 |
mA | ||
Ptot |
total power dissipation |
Tamb 25 °C; note 1 |
1.2 |
W | |
Tstg |
storage temperature |
-65 |
+150 |
°C | |
Tj |
junction temperature |
150 |
°C | ||
Tamb |
operating ambient temperature |
-65 |
+150 |
°C |
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see "Thermal considerations for SOT223 in the General Part of associated Handbook".
P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope, intended for use in relay, high-speed and line transformer drivers.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
-VDS |
drain-source voltage |
200 |
V | ||
-VGSO |
gate-source voltage |
|
20 |
V | |
-ID |
DC drain current |
DC value |
250 |
mA | |
-IDM |
peak drain current |
peak value |
600 |
A | |
Ptot |
total power dissipation |
up to Tamb = 25 °C (note 1) |
1 |
W | |
Tstg |
storage temperature |
-65 |
150 |
°C | |
Tj |
operating junction temperature |
150 |
°C |
Note
1. Device mounted on an epoxy printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead
minimum 10 mm x 10 mm.
P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope, intended for use in relay, high-speed and line transformer drivers.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
-VDS |
drain-source voltage |
200 |
V | ||
-VGSO |
gate-source voltage |
|
20 |
V | |
-ID |
DC drain current |
DC value |
250 |
mA | |
-IDM |
peak drain current |
peak value |
600 |
A | |
Ptot |
total power dissipation |
up to Tamb = 25 °C (note 1) |
1 |
W | |
Tstg |
storage temperature |
-65 |
150 |
°C | |
Tj |
operating junction temperature |
150 |
°C |
Note
1. Device mounted on an epoxy printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead
minimum 10 mm x 10 mm.