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This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • High Voltage: V(BR)CEO of 250 and 350 Volts. • The SOT-223 package can be soldered using wave or reflow. • SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die • Available in 12 mm Tape and Reel T1 Configuration 7 inch/1000 unit reel T3 Configuration 13 inch/4000 unit reel • PNP Complement is BSP16T1
BSP19AT1 Maximum Ratings
Parameter
Symbol
BSP19A
BSP20A
Unit
Collector-Base Voltage
VCBO
350
250
V
Collector-Emitter Voltage
VCEO
400
300
Emitter-Base Voltage
VEBO
5.0
Collector Current
IC
1000
A
Total Device Dissipation, TA = 25°C (1)
PD
0.8 6.4
Watts mW/°C
Storage Temperature Range
Tstg
65 to 150
°C
Junction Temperature
Tj
150
°C
1. 1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.