BSN204A, BSN205, BSN205A Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:TO-92 D/C:07+
BSN204A, BSN205, BSN205A Datasheet download
Part Number: BSN204A
MFG: PHILIPS
Package Cooled: TO-92
D/C: 07+
BSN204A, BSN205, BSN205A
- Table of contents:
Info of BSN204A
Info of BSN205
Info of BSN205A
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About BSN10
PDF/DataSheet Download
Datasheet: BSN10
File Size: 78507 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BSN205
PDF/DataSheet Download
Datasheet: BSN205
File Size: 51642 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BSN205A
PDF/DataSheet Download
Datasheet: BSN205A
File Size: 51642 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BSN205 General Description
N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed primarily as a line current interrupter in telephone sets, it can also be applied in other applications such as in relays, line and high speed transformer drivers etc.
BSN205 Maximum Ratings
Drain-source voltage ..........................VDS max. 200 V
Gate-source voltage (open drain) ....................± VGSO max. 20 V
Drain current (DC)............................ ID max. 300 mA
Drain current (peak) ............................IDM max. 1.2 A
Total power dissipation up to Tamb = 25 °C (note 1) ............Ptot max. 1 W
Storage temperature range.................... Tstg -65 to + 150 °C
Junction temperature............................ Tj max. 150 °C
Note:1. Transistor mounted on printed-circuit board, max. lead length 4 mm, mounting pad for drain lead min. 10 mm ´ 10 mm.
BSN205 Features
· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown
· Low RDS(on)
· High-speed switching
· No secondary breakdown
· Low RDS(on)
BSN205A General Description
N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed primarily as a line current interrupter in telephone sets, it can also be applied in other applications such as in relays, line and high speed transformer drivers etc.
BSN205A Maximum Ratings
Drain-source voltage ..........................VDS max. 200 V
Gate-source voltage (open drain) ....................± VGSO max. 20 V
Drain current (DC)............................ ID max. 300 mA
Drain current (peak) ............................IDM max. 1.2 A
Total power dissipation up to Tamb = 25 °C (note 1) ............Ptot max. 1 W
Storage temperature range.................... Tstg -65 to + 150 °C
Junction temperature............................ Tj max. 150 °C
Note:1. Transistor mounted on printed-circuit board, max. lead length 4 mm, mounting pad for drain lead min. 10 mm ´ 10 mm.
BSN205A Features
· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown
· Low RDS(on)
· High-speed switching
· No secondary breakdown
· Low RDS(on)
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