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BSN274A

Features: · Direct interface to C-MOS, TTL, etc., due to low threshold voltage· High speed switching· No secondary breakdownSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 270 V ±VGSO gate-source voltage open...

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SeekIC No. : 004302215 Detail

BSN274A: Features: · Direct interface to C-MOS, TTL, etc., due to low threshold voltage· High speed switching· No secondary breakdownSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. ...

BSN274A Data Sheet

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Part Number:
BSN274A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Direct interface to C-MOS, TTL, etc., due to low threshold voltage
· High speed switching
· No secondary breakdown


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
270
V
±VGSO
gate-source voltage
open drain
20
V
ID
DC drain current
 DC
250
mA
IDM
peak drain current
 peak
1
A
Ptot
total power dissipation
up to Tamb = 25 °C; note 1
1
W
Tstg
storage temperature
-65
150
°C
Tj
operating junction temperature
150
°C

Note:1. Device mounted on an epoxy printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum 10 mm x 10 mm.




Description

Silicon n-channel enhancement mode vertical D-MOS transistor BSN274A in TO-92 variant envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers.




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