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BFG65, BFG67, BFG67/X

Table of contents:
Info of BFG65
Info of BFG67
Info of BFG67/X

BFG65, BFG67, BFG67/X Selling Leads, Datasheet

MFG:PHILIPS Package Cooled:SOT122 D/C:04+

BFG65, BFG67, BFG67/X Datasheet download

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Part Number: BFG65

MFG: PHILIPS

Package Cooled: SOT122

D/C: 04+

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BFG67 Maximum Ratings

Parameter	Test Conditions	Symbol	Value	Unit
Collector-base voltage		V_CBO	20	V
Collector-emitter voltage		V_CEO	10	V
Emitter-base voltage		V_EBO	2.5	V
Collector current		I_G	50	mA
Total power dissipation	Tamb 60	P_tot	200	mW
Junction temperature		T_j	150
Storage temperature range		T_stg	65 to +150

BFG67 Features

· Small feedback capacitance
· Low noise figure
· High transition frequency

BFG67 Typical Application

Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.

BFG67/X General Description

NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X). Version with reverse pinning (BFG67/XR) also available on request.

BFG67/X Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	20	V
V_CEO	collector-emitter voltage	open base	-	10	V
V_EBO	emitter-base voltage	open collector	-	2.5	V
I_C	collector current (DC)		-	50	mA
P_tot	total power dissipation	T_s 65 °C; note 3; note 1	-	380	mW
T_stg	storage temperature		-65	150	°C
T_j	junction temperature		-	175	°C

Note
1. T_s is the temperature at the soldering point of the collector pin.

BFG67/X Features

· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.

BFG67/X Typical Application

Wideband applications in the GHz range, such as satellite TV tuners and portable RF communications equipment.

BFG67/X Connection Diagram

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