BFG590W/X, BFG590X, BFG591 Selling Leads, Datasheet
MFG:PHI Package Cooled:SMD D/C:09+
BFG590W/X, BFG590X, BFG591 Datasheet download
Part Number: BFG590W/X
MFG: PHI
Package Cooled: SMD
D/C: 09+
BFG590W/X, BFG590X, BFG591
- Table of contents:
Info of BFG590W/X
Info of BFG590X
Info of BFG591
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About BFG590W/X
PDF/DataSheet Download
Datasheet: BFG590W/X
File Size: 113374 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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About BFG590X
PDF/DataSheet Download
Datasheet: BFG590X
File Size: 92791 KB
Manufacturer: Philips
Download : Click here to Download
About BFG591
PDF/DataSheet Download
Datasheet: BFG591
File Size: 109271 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BFG590W/X General Description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.
BFG590W/X Maximum Ratings
| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCBO | collector-base voltage |
open emitter |
- |
20 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
15 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
3 |
V |
| IC | collector current (DC) |
- |
200 |
mA | |
| Ptot | total power dissipation |
Ts 85 °C; see Fig.2; note 1 |
- |
500 |
mW |
| Tstg | storage temperature |
-65 |
+150 |
°C | |
| Tj | junction temperature |
- |
175 |
°C |
Note
1. Ts is the temperature at the soldering point of the collector pin.
BFG590W/X Features
· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.
BFG590W/X Typical Application
· MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range
· Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive.
· Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive.
BFG590W/X Connection Diagram
BFG590X General Description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package.
BFG590X Features
· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.
BFG590X Typical Application
· MATV/CATV amplifiers and RF communications
subscriber equipment in the GHz range
· Ideally suitable for use in class-A, (A)B and C amplifiers
with either pulsed or continuous drive.
subscriber equipment in the GHz range
· Ideally suitable for use in class-A, (A)B and C amplifiers
with either pulsed or continuous drive.
BFG590X Connection Diagram
BFG591 General Description
The BFG591 is designed as one kind of NPN 7 GHz wideband transistor which intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment.It has some features such as:(1)high power gain;(2)low noise figure;(3)high transition frequency;(4)gold metallization ensures excellent reliability.
The quick reference data of the BFG591 can be summarized as:(1)collector-base voltage:20 V;(2)collector-emitter voltage:15 V;(3)collector current (DC):200 mA;(4)total power dissipation:2 W;(5)DC current gain:60 to 250;(6)feedback capacitance:0.7 pF;(7)transition frequency:7 GHz;(8)maximum unilateral power gain:13 dB;(9)insertion power gain:12 dB;(10)thermal resistance from junction to soldering point:35 K/W.
Also these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
BFG591 Connection Diagram
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